Formation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Doses
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Date
2018
Journal Title
Journal ISSN
Volume Title
Publisher
Journal of the Korean Physical Society
Abstract
In the present work, boron-carbide (B4C) samples (purity of 99.5% and density of 1.80 g/cm3)
were irradiated by using gamma radiation from a 60Co gamma source. Gamma irradiation of the
samples was carried out at doses 48.5, 97, 145.5 and 194 kGy. The samples were analysed using
a UV-V Gary 50 Scan spectrophotometer. The effect of different irradiation doses on the defects
created in the B4C samples was investigated. In the B4C samples, the formation processes for
color centers depended on the gamma irradiation dose. The calculated activation energies at room
temperature essential for the formation of F and F+ color centers ranged from 1.89 - 2.05 eV.
Description
Keywords
Boron carbide, Gamma irradiation dose, Color centers, Activation energy, Defect concentration
Citation
Mirzayev, M. N., Mehdiyeva, R. N., Melikova, S. Z., Jabarov, S. H., Thabethe, T. T., Biira, S., ... & Tiep, N. V. (2019). Formation of color centers and concentration of defects in boron carbide irradiated at low gamma radiation doses. Journal of the Korean Physical Society, 74, 363-367. DOI: 10.3938/jkps.74.363