Formation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Doses

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dc.contributor.authorMirzayev, Matlab Nabi
dc.contributor.authorMehdiyeva, Ravan Nadir
dc.contributor.authorZellabdin Melikova, Sevinj
dc.contributor.authorHamid Jabarov, Sakin
dc.contributor.authorTheodora Thabethe, Thabsile
dc.contributor.authorBiira, Saphina
dc.contributor.authorAbdulla Kurbanov, Mirze
dc.contributor.authorVan Tiep, Nguyen
dc.date.accessioned2023-04-01T17:13:10Z
dc.date.available2023-04-01T17:13:10Z
dc.date.issued2018
dc.description.abstractIn the present work, boron-carbide (B4C) samples (purity of 99.5% and density of 1.80 g/cm3) were irradiated by using gamma radiation from a 60Co gamma source. Gamma irradiation of the samples was carried out at doses 48.5, 97, 145.5 and 194 kGy. The samples were analysed using a UV-V Gary 50 Scan spectrophotometer. The effect of different irradiation doses on the defects created in the B4C samples was investigated. In the B4C samples, the formation processes for color centers depended on the gamma irradiation dose. The calculated activation energies at room temperature essential for the formation of F and F+ color centers ranged from 1.89 - 2.05 eV.en_US
dc.identifier.citationMirzayev, M. N., Mehdiyeva, R. N., Melikova, S. Z., Jabarov, S. H., Thabethe, T. T., Biira, S., ... & Tiep, N. V. (2019). Formation of color centers and concentration of defects in boron carbide irradiated at low gamma radiation doses. Journal of the Korean Physical Society, 74, 363-367. DOI: 10.3938/jkps.74.363en_US
dc.identifier.other10.3938/jkps.74.363
dc.identifier.urihttps://nru.uncst.go.ug/handle/123456789/8379
dc.language.isoenen_US
dc.publisherJournal of the Korean Physical Societyen_US
dc.subjectBoron carbideen_US
dc.subjectGamma irradiation doseen_US
dc.subjectColor centersen_US
dc.subjectActivation energyen_US
dc.subjectDefect concentrationen_US
dc.titleFormation of Color Centers and Concentration of Defects in Boron Carbide Irradiated at Low Gamma Radiation Dosesen_US
dc.typeArticleen_US
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