Investigating the structural changes induced by SHI on W–SiC samples

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dc.contributor.authorThabethe, T.T.
dc.contributor.authorNtsoane, T.P.
dc.contributor.authorBiira, S.
dc.contributor.authorNjoroge, E.G.
dc.contributor.authorHlatshwayo, T.T.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorMalherbe, J.B.
dc.date.accessioned2023-04-01T17:27:41Z
dc.date.available2023-04-01T17:27:41Z
dc.date.issued2020
dc.description.abstractThe structural modification of tungsten-SiC samples irradiated with Xe26þ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC samples were irradiated by 167 MeV Xe26þ ions to fluences of 1012 cm􀀀 2, 1013 cm􀀀 2 and 1014 cm􀀀 2 at room temperature. The sample composition, phase identification, residual stress component and surface morphology were investigated with Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated that the as-deposited samples were composed of W and SiC, with no reaction between them. The samples irradiated to a fluence of 1012 cm􀀀 2 showed that a reaction between W and SiC took place resulting in the formation of WSi2 and WC phases. The samples irradiated to fluences of 1013 and 1014 cm􀀀 2 showed further reactions between W and SiC with WSi2 and WC being the only phases formed. The SiC substrate had bi-axial compressive stress which did not excess 700 MPa after irradiating to the highest fluence. The W layer deposited on SiC was flat and homogeneous after deposition. A textured surface with identifiable grains was observed after the SHI irradiations.en_US
dc.identifier.citationThabethe, T. T., Ntsoane, T. P., Biira, S., Njoroge, E. G., Hlatshwayo, T. T., Skuratov, V. A., & Malherbe, J. B. (2020). Investigating the structural changes induced by SHI on W–SiC samples. Vacuum, 174, 109230. https://doi.org/10.1016/j.vacuum.2020.109230en_US
dc.identifier.urihttps://doi.org/10.1016/j.vacuum.2020.109230
dc.identifier.urihttps://nru.uncst.go.ug/handle/123456789/8381
dc.language.isoenen_US
dc.publisherVacuumen_US
dc.subjectTungstenen_US
dc.subjectThin filmen_US
dc.subjectSiCen_US
dc.subjectSHIsen_US
dc.subjectIrradiationen_US
dc.subjectReactionen_US
dc.titleInvestigating the structural changes induced by SHI on W–SiC samplesen_US
dc.typeArticleen_US
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