Investigating the structural changes induced by SHI on W–SiC samples

Thabethe, T.T.; Ntsoane, T.P.; Biira, S.; Njoroge, E.G.; Hlatshwayo, T.T.; Skuratov, V. A.; Malherbe, J.B.

Investigating the structural changes induced by SHI on W–SiC samples

Date

2020

Authors

Publisher

Vacuum

Abstract

The structural modification of tungsten-SiC samples irradiated with Xe26þ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC samples were irradiated by 167 MeV Xe26þ ions to fluences of 1012 cm􀀀 2, 1013 cm􀀀 2 and 1014 cm􀀀 2 at room temperature. The sample composition, phase identification, residual stress component and surface morphology were investigated with Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated that the as-deposited samples were composed of W and SiC, with no reaction between them. The samples irradiated to a fluence of 1012 cm􀀀 2 showed that a reaction between W and SiC took place resulting in the formation of WSi2 and WC phases. The samples irradiated to fluences of 1013 and 1014 cm􀀀 2 showed further reactions between W and SiC with WSi2 and WC being the only phases formed. The SiC substrate had bi-axial compressive stress which did not excess 700 MPa after irradiating to the highest fluence. The W layer deposited on SiC was flat and homogeneous after deposition. A textured surface with identifiable grains was observed after the SHI irradiations.

Keywords

Tungsten, Thin film, SiC, SHIs, Irradiation, Reaction

Citation

Thabethe, T. T., Ntsoane, T. P., Biira, S., Njoroge, E. G., Hlatshwayo, T. T., Skuratov, V. A., & Malherbe, J. B. (2020). Investigating the structural changes induced by SHI on W–SiC samples. Vacuum, 174, 109230. https://doi.org/10.1016/j.vacuum.2020.109230