Formation of silicon oxide over gold layers on silicon substrates

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dc.contributor.authorHiraki, Akio
dc.contributor.authorLugujjo, Eriabu
dc.contributor.authorMayer, J. W.
dc.date.accessioned2021-11-30T07:12:52Z
dc.date.available2021-11-30T07:12:52Z
dc.date.issued2003
dc.description.abstractWhen a single‐crystal substrate of silicon is covered with evaporated gold and heated at relatively low temperatures (100–300°C) in an oxidizing atmosphere, a silicon‐dioxide layer is readily formed over the gold layer. The mechanism and factors controlling this low‐temperature oxide formation have been investigated using backscattering of 2‐MeV He+ ions. The oxide layer is nonuniform in thickness and the initial growth of this layer is proportional to (time)1/2. Both oxidizing ambient and orientation of the substrate influence the growth rate, and the amount of gold determines the final thickness of oxide. A model is proposed to explain the oxide‐growth mechanism.en_US
dc.identifier.citationHiraki, A., Lugujjo, E., & Mayer, J. W. (1972). Formation of silicon oxide over gold layers on silicon substrates. Journal of Applied Physics, 43(9), 3643-3649. DOI: https://doi.org/10.1063/1.1661782en_US
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.1661782
dc.identifier.urihttps://nru.uncst.go.ug/xmlui/handle/123456789/149
dc.language.isoenen_US
dc.publisherJournal of Applied Physicsen_US
dc.subjectSilicon oxideen_US
dc.subjectGold layersen_US
dc.subjectSilicon substratesen_US
dc.titleFormation of silicon oxide over gold layers on silicon substratesen_US
dc.typeArticleen_US
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