Formation of silicon oxide over gold layers on silicon substrates
Loading...
Date
2003
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Journal of Applied Physics
Abstract
When a single‐crystal substrate of silicon is covered with evaporated gold and heated at relatively low temperatures (100–300°C) in an oxidizing atmosphere, a silicon‐dioxide layer is readily formed over the gold layer. The mechanism and factors controlling this low‐temperature oxide formation have been investigated using backscattering of 2‐MeV He+ ions. The oxide layer is nonuniform in thickness and the initial growth of this layer is proportional to (time)1/2. Both oxidizing ambient and orientation of the substrate influence the growth rate, and the amount of gold determines the final thickness of oxide. A model is proposed to explain the oxide‐growth mechanism.
Description
Keywords
Silicon oxide, Gold layers, Silicon substrates
Citation
Hiraki, A., Lugujjo, E., & Mayer, J. W. (1972). Formation of silicon oxide over gold layers on silicon substrates. Journal of Applied Physics, 43(9), 3643-3649. DOI: https://doi.org/10.1063/1.1661782