Browsing by Author "Hlatshwayo, T.T."

Now showing 1 - 6 of 6
  • Thumbnail Image
    Item
    Design and fabrication of a chemical vapour deposition system with special reference to ZrC layer growth characteristics
    (Journal of the Southern African Institute of Mining and Metallurgy, 2017) Biira, S.; Crouse, P.L.; Bissett, H.; Hlatshwayo, T.T.; Laar, J.H. van; Malherbe, J.B.
    The overall aim of this research project was to design and construct an inhouse, thermal chemical vapour deposition (CVD) reactor system, operating at atmospheric pressure. Radio frequency (RF) induction heating was used as the energy source, with a vertical-flow design, using thermally stable materials. The steps in the design and construction of this CVD system are described in detail. The growth conditions at different substrate temperatures, gas flow ratios and substrate-gas inlet gaps were assessed as part of the project. The growth rate of ZrC layers increases with increasing substrate temperature. The microstructure properties of the ZrC layers such as lattice parameters and orientation of crystal planes were all found to be dependent on deposition temperature. The increase in free carbon in the as-deposited coatings as the temperature increased was found to be a stumbling block for obtaining stoichiometric ZrC coatings. The surface morphology of the as-deposited ZrC layers also depends on the deposition parameters.
  • Thumbnail Image
    Item
    Influence of the substrate gas-inlet gap on the growth rate, morphology and microstructure of zirconium carbide films grown by chemical vapour deposition
    (Ceramics International, 2017) Biira, S.; Alawad, B.A.B.; Bissett, H.; Nel, J.T.; Ntsoane, T.P.; Hlatshwayo, T.T.; Crouse, P.L.; Malherbe, J.B.
    The influence of the gap between the gas inlet and the substrate in an in-house developed thermal chemical vapour deposition (CVD) reactor, on the growth rate, surface morphology, phase composition and microstructure of deposited ZrC films was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The ZrC films were grown on high density graphite substrates at different substrate-inlet gaps, viz. 70 mm, 90 mm, 120 mm, 145 mm and 170 mm, at substrate temperatures of 1200 °C and 1400 °C. The growth rate of ZrC films prepared at 1400 °C was observed to be higher than at 1200 °C., and was found to decrease with increase in substrate-inlet gap at both temperatures. The boundary layer thickness increased with an increase in substrate-inlet gap. The diffusion coefficients of the reactants were found to be 0.176 cm2/s and 0.200 cm2/s for the ZrC films deposited at 1200 °C and 1400 °C respectively. A model illustrating the diffusion of source materials through the boundary layer to the reacting surface was also given. The XRD results of ZrC films showed that at both 1200 °C and 1400 °C the (111) plane was the less preferred orientation, while (200) and (220) were the preferred planes. The degree of preferred orientation of ZrC films was found to decrease with increasing substrate-inlet gap. SEM results indicated that as the substrate-inlet gap increased from 70 mm to 170 mm for 1400 °C, the films became more uniform with increased particle agglomeration. The cauliflower like clusters of particles grew larger in size and covered the whole surface. By contrast, at 1200 °C the surface crystallites had complex facets that decreased in size as the substrate-inlet gap increased from 70 mm to 170 mm.
  • Thumbnail Image
    Item
    Investigating the structural changes induced by SHI on W–SiC samples
    (Vacuum, 2020) Thabethe, T.T.; Ntsoane, T.P.; Biira, S.; Njoroge, E.G.; Hlatshwayo, T.T.; Skuratov, V. A.; Malherbe, J.B.
    The structural modification of tungsten-SiC samples irradiated with Xe26þ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC samples were irradiated by 167 MeV Xe26þ ions to fluences of 1012 cm􀀀 2, 1013 cm􀀀 2 and 1014 cm􀀀 2 at room temperature. The sample composition, phase identification, residual stress component and surface morphology were investigated with Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated that the as-deposited samples were composed of W and SiC, with no reaction between them. The samples irradiated to a fluence of 1012 cm􀀀 2 showed that a reaction between W and SiC took place resulting in the formation of WSi2 and WC phases. The samples irradiated to fluences of 1013 and 1014 cm􀀀 2 showed further reactions between W and SiC with WSi2 and WC being the only phases formed. The SiC substrate had bi-axial compressive stress which did not excess 700 MPa after irradiating to the highest fluence. The W layer deposited on SiC was flat and homogeneous after deposition. A textured surface with identifiable grains was observed after the SHI irradiations.
  • Thumbnail Image
    Item
    Investigating the thermal stability of the chemical vapour deposited zirconium carbide layers
    (Journal of Alloys and Compounds, 2020) Biira, Saphina; Thabethe, T.T.; Hlatshwayo, T.T.; Bissett, H.; Ntsoane, T.; Malherbe, J.B.
    The effect of thermal treatment on zirconium carbide (ZrC) layers deposited by chemical vapour deposition process was investigated using X-ray diffraction (XRD), Raman spectroscopy, nanoindention and scanning electron microscopy (SEM). The ZrC layers deposited at 1400 C (composed of 96% ZrC and 4% C) were annealed at 1500, 1600, 1700 and 1800 C for 2 h under high vacuum of 2.6 10 7 mbar. After annealing, the lattice constant and the average crystallite sizes were found to increase whereas the lattice strain and dislocation density decreased. The preferred orientation of the as-deposited layers was (220); it changed to (200) when annealed at 1500 C and 1600 C. At annealing temperature of 1700 C and 1800 C, the preferred orientation was (220) just like for the as-deposited ZrC layers. From Raman spectroscopy analysis, the ID/IG ratio reduced from 0.694 to 0.414 with annealing temperature indicating an improvement in crystallinity level and a decrease in the defects in the carbon material in the ZrC layers. The hardness of the layers was found to decrease slightly with annealing temperature from 26.4 ± 0.6 GPa to 21.3 ± 0.5 GPa. Some voids initially present in the as-deposited ZrC layers closed up and particles increased in size with annealing temperature.
  • Thumbnail Image
    Item
    Irradiation effects of swift heavy ions on palladium films deposited on 6H-SiC substrate
    (Nuclear Inst. and Methods in Physics Research B, 2019) Thabethe, T.T.; Nstoane, T.; Biira, S.; Njoroge, E.G.; Hlatshwayo, T.T.; Skuratovd, V.A.
    The irradiation effect of swift heavy ions on palladium (Pd) films deposited on 6H-SiC was investigated. The samples were irradiated by Xe26+ ions with the energy of 167 MeV at fluences of 1×1013 cm−2 and 3×1014 cm−2 at room temperature. Phase identification, residual stress and surface morphology were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD results showed that the as-deposited sample was composed of Pd and SiC with no evidence of a reaction between Pd and SiC. No reaction was observed for the lower irradiation fluence, only an increase in the Pd peak intensities was observed indicating improvement in the crystallinity of the material. A reaction between Pd and SiC forming PdSi and Pd2Si was observed after irradiation at a fluence of 3×1014 cm−2. The stress measurements indicated that the films were having tensile and biaxial stress not exceeding 200 MPa. A decrease in stress values was observed with an increase in irradiation fluence. The surface morphology of the as-deposited was flat and composed of small granules. There was an increase in granule sizes due to irradiation at 1×1013 cm−2. Irradiating at 3×1014 cm−2 caused grain agglomeration and clustering.
  • Thumbnail Image
    Item
    The role of ZrCl4 partial pressure on the growth characteristics of chemical vapour deposited ZrC layers
    (Ceramics International, 2017) Biira, S.; Crouse, P.L.; Bissett, H.; Hlatshwayo, T.T.; Njoroge, E.G.; Nel, J.T.; Ntsoane, T.P.; Malherbe, J.B.
    ZrC layers were deposited in a chemical vapour deposition (CVD) reactor on graphite substrates using a ZrCl4- Ar-CH4-H2 precursor mixture. The deposition was conducted at different ZrCl4 partial pressures at a constant substrate temperature of 1400 °C for 2 h at atmospheric pressure. The deposited ZrC layers were characterised using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The effect of ZrCl4 partial pressure on the growth rate, microstructure and surface morphology of the deposited layers was studied. The ZrCl4 partial pressure was manipulated by changing the flow rate of the argon carrier gas through the sublimation chamber. The boundary layer thickness decreased as ZrCl4 partial pressures increased due increased argon flows. The increased ZrCl4 partial pressure increased the growth rate of ZrC layers linearly. It was found that the transport process of the source materials was laminar and forced convection flow. The flow process of source materials through the boundary layer to the reacting surface was also illustrated using a model. The average crystallite size increased with ZrCl4 partial pressures, whereas the lattice parameter, lattice strain and dislocation density decreased as ZrCl4 partial pressure increased. The surface morphology of the asdeposited ZrC layers varied with the ZrCl4 partial pressure. The size of crystals grew larger and the cavities surrounding them decreased in number and size as the ZrCl4 partial pressure increased.