Crystal structure changes and weight kinetics of silicon-hexaboride under gamma irradiation dose

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dc.contributor.authorMirzayeva, M.N.
dc.contributor.authorJabarova, S.H.
dc.contributor.authorAsgerova, E.B.
dc.contributor.authorMehdiyeva, R.N.
dc.contributor.authorThabethe, T.T.
dc.contributor.authorBiira, S.
dc.contributor.authorTiep, N.V.
dc.date.accessioned2023-04-01T16:08:52Z
dc.date.available2023-04-01T16:08:52Z
dc.date.issued2018
dc.description.abstractThe silicide hexaboride (B6Si) was irradiated with 60Co at room temperature to study the structural changes and weight kinetics. The B6Si samples were irradiated using a gamma source with a dose rate (D) of 0.27 Gy/s. At adsorption dose range of 9.7, 48.5, 97, 145.5 and 194 kGy. The samples were analysed using X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS) to study the microstructural and composition changes. The XRD results showed the crystalline structure for the sample before and after irradiation (with gamma irradiation dose 9.7, 48.5 and 97 kGy). Amorphization of the sample began at the gamma irradiation dose of 145.5 kGy. Increase in gamma irradiation dose had an inverse effect on the activation energy and had a directly proportional effect on the lattice volume.en_US
dc.identifier.citationMirzayev, M. N., Jabarov, S. H., Asgerov, E. B., Mehdiyeva, R. N., Thabethe, T. T., Biira, S., & Tiep, N. V. (2018). Crystal structure changes and weight kinetics of silicon-hexaboride under gamma irradiation dose. Results in Physics, 10, 541-545. https://doi.org/10.1016/j.rinp.2018.06.034en_US
dc.identifier.urihttps://doi.org/10.1016/j.rinp.2018.06.034
dc.identifier.urihttps://nru.uncst.go.ug/handle/123456789/8369
dc.language.isoenen_US
dc.publisherResults in Physicsen_US
dc.subjectWeight kineticsen_US
dc.subjectSilicon-hexaborideen_US
dc.subjectGamma irradiation doseen_US
dc.titleCrystal structure changes and weight kinetics of silicon-hexaboride under gamma irradiation doseen_US
dc.typeArticleen_US
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