Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection
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Date
2017
Journal Title
Journal ISSN
Volume Title
Publisher
Scientific reports
Abstract
We, for the first time, provide the experimental demonstration on the band gap engineering of layered
hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap
is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV similar to that
of bulk for the 1200 nm thick film. The variation of the band gap is consistent with the the theoretically
predicted layer-dependent band gap of SnSe2. Interestingly, the 400–1200 nm thick films were
sensitiveto 1064 nm laser iradiation and the sensitivity increases almost exponentiallly with thickness,
while films with 50–140 nm thick are insensitive which is due to the fact that the band gap of thinner
films is greater than the energy corresponding to 1064 nm. Over all, our results establish the possibility
of engineering the band gap of SnSe2 layered structures by simply controlling the thickness of the film
to absorb a wide range of electromagnetic radiation from infra-red to visible range.
Description
Keywords
Band Gap Engineering, Hexagonal SnSe2, Films, Infra-Red Photodetection
Citation
Mukhokosi, E. P., Krupanidhi, S. B., & Nanda, K. K. (2017). Band gap engineering of hexagonal SnSe2 nanostructured thin films for infra-red photodetection. Scientific reports, 7(1), 15215. DOI:10.1038/s41598-017-15519-x