Browsing by Author "Mayer, J. W."

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    Formation of silicon oxide over gold layers on silicon substrates
    (Journal of Applied Physics, 2003) Hiraki, Akio; Lugujjo, Eriabu; Mayer, J. W.
    When a single‐crystal substrate of silicon is covered with evaporated gold and heated at relatively low temperatures (100–300°C) in an oxidizing atmosphere, a silicon‐dioxide layer is readily formed over the gold layer. The mechanism and factors controlling this low‐temperature oxide formation have been investigated using backscattering of 2‐MeV He+ ions. The oxide layer is nonuniform in thickness and the initial growth of this layer is proportional to (time)1/2. Both oxidizing ambient and orientation of the substrate influence the growth rate, and the amount of gold determines the final thickness of oxide. A model is proposed to explain the oxide‐growth mechanism.