Browsing by Author "Van Gasse, Kasper"

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    50 Gb/s DMT and 120 Mb/s LTE signal transmission over 5 km of optical fiber using a silicon photonics transceiver
    (In Integrated Photonics Research, Silicon and Nanophotonics, 2018) Rahim, Abdul; Abbasi, Amin; Shahin, Mahmoud; Sequeira André, Nuno; Richter, André; Kerrebrouck, Joris Van; Van Gasse, Kasper; Katumba, Andrew; Moeneclaey, Bart; Yin, Xin; Morthier, Geert; Baets, Roel; Roelkens, Gunther
    Next-generation passive optical networks will require the use of low-cost, high-performance transceivers to cope with the increasing bandwidth demands for emerging applications such as fixed-mobile convergence for 5G. Silicon photonics is widely acknowledged as a technology that can provide manufacturing of low-cost photonic integrated circuits by using existing CMOS fabrication infrastructure. Intensity modulation/direct detection solutions can reach 100 Gb/s per wavelength, but require high-speed electronics and photonics, which adversely affects the cost. An alternative approach is to use advanced multi-carrier modulation schemes, such as Discrete Multi-Tone (DMT), a real-valued Orthogonal Frequency Division Multiplexing (OFDM) scheme. This technique uses Digital Signal Processing (DSP) to relax electrical and optical bandwidth requirements on the transmitter and receiver side. It promises high spectral efficiency and granularity, higher tolerance to fiber impairments and channel adaptation through flexible multi-level / multi-carrier coding [1]. DMT transmission at 100 Gb/s and even 4x100 Gb/s using modest bandwidth (~ 20 GHz) electronic and optical components has already been demonstrated [2-4]. Despite requiring computationally more expensive DSP compared to single carrier baseband schemes (e.g., OOK, PAM), DMT’s added advantage is that it allows transmission of a mobile data signal within its bandwidth using the same optical transceiver [5]. In this work we demonstrate the combined transmission of a Long Term Evolution (LTE) 4G mobile communication signal (at 3.48 GHz carrier frequency) and a 50 Gb/s DMT signal using a directly modulated InP-on-Silicon Distributed Feedback (DFB) laser. Direct modulation is poised to provide low power consumption and a reduced number of optical components in the transceiver. On the receiver side, a silicon-waveguide-coupled germanium photodiode (GeSi-PD) with a co-designed trans-impedance amplifier (TIA) is used and its performance is compared with a commercial III-V photodiode and TIA.
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    69 Gb/s DMT direct modulation of a Heterogeneously Integrated InP-on-Si DFB Laser
    (In Optical Fiber Communication Conference, 2017) Rahim, Abdul; Abbasi, Amin; Sequeira André, Nuno; Katumba, Andrew; Louchet, Hadrien; Van Gasse, Kasper; Baets, Roel; Morthier, Geert; Roelkens, Gunther
    Emerging applications such as high definition video streaming and cloud computing are the main drivers for the user-driven increase in the Internet traffic for the past few years. This has led to an increase in the processing capacity of the data centers demanding high-speed intra-datacenter communication links [1]. To address the expected growth of such short reach high speed links, the use of Wavelength Division Multiplexing (WDM) [2] and advanced modulation formats such as Quadrature Amplitude Modulation (QAM), multiband Carrierless Amplitude Phase Modulation (multi-CAP), Pulse Amplitude Modulation (PAM), and Discrete Multi-Tone (DMT) modulation [3,4] have been reported. Among these approaches, DMT has gained a lot of attention recently due to its ability to deliver 100G transmission using as low as ~20GHz optical devices [5]. Important considerations for such short reach communication links are low cost, small form factor and low power consumption. Silicon photonics is an emerging technology expected to deliver these attributes. Recently, data rates of 400 Gb/s by multiplexing 4 channels [5] and 0.88 Tb/s by multiplexing 10 channels [6] have been reported using silicon photonics. The power consumption of the optical frontend and footprint can be further reduced by implementing Directly Modulated Lasers (DMLs) on a heterogeneously integrated InP-on-Si platform [7]. Further more such lasers have been shown recently to have state-of-the-art modulation bandwidth performance [8]. In this paper we demonstrate single channel 69 Gb/s DMT modulation using a directly modulated heterogeneously integrated InP-on-Si DFB laser.