Thabethe, T.T.Ntsoane, T.P.Biira, S.Njoroge, E.G.Hlatshwayo, T.T.Skuratov, V. A.Malherbe, J.B.2023-04-012023-04-012020Thabethe, T. T., Ntsoane, T. P., Biira, S., Njoroge, E. G., Hlatshwayo, T. T., Skuratov, V. A., & Malherbe, J. B. (2020). Investigating the structural changes induced by SHI on W–SiC samples. Vacuum, 174, 109230. https://doi.org/10.1016/j.vacuum.2020.109230https://doi.org/10.1016/j.vacuum.2020.109230https://nru.uncst.go.ug/handle/123456789/8381The structural modification of tungsten-SiC samples irradiated with Xe26þ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC samples were irradiated by 167 MeV Xe26þ ions to fluences of 1012 cm􀀀 2, 1013 cm􀀀 2 and 1014 cm􀀀 2 at room temperature. The sample composition, phase identification, residual stress component and surface morphology were investigated with Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated that the as-deposited samples were composed of W and SiC, with no reaction between them. The samples irradiated to a fluence of 1012 cm􀀀 2 showed that a reaction between W and SiC took place resulting in the formation of WSi2 and WC phases. The samples irradiated to fluences of 1013 and 1014 cm􀀀 2 showed further reactions between W and SiC with WSi2 and WC being the only phases formed. The SiC substrate had bi-axial compressive stress which did not excess 700 MPa after irradiating to the highest fluence. The W layer deposited on SiC was flat and homogeneous after deposition. A textured surface with identifiable grains was observed after the SHI irradiations.enTungstenThin filmSiCSHIsIrradiationReactionArticle